2SA2099 / 2sc5888 no.7331-1/5 applications relay drivers, lamp drivers, motor drivers. features adoption of mbit process. high current capacitance. low collector-to-emitter saturation voltage. high-speed switching. specifications ( ) : 2SA2099 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)10 a collector current (pulse) i cp (--)13 a base current i b (--)2 a collector dissipation p c 2w tc=25 c25w junction temperature tj 150 c storage temperature tstg --55 to +150 c tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en7331a 32608fa ti im / d2502 ts im ta-3711 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2SA2099 / 2sc5888 pnp / npn epitaxial planar silicon transistors high-current switching applications
2SA2099 / 2sc5888 no.7331-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)10 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)10 a dc current gain h fe v ce =(--)2v, i c =(--)1a 200 (560)700 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a (130)200 mhz output capacitance cob v cb =(--)10v, f=1mhz (90)60 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)5a, i b =(--)250ma (--250)180 (--500)360 mv base-to-emitter saturation voltage v be (sat) i c =(--)5a, i b =(--)250ma (--)0.93 (--)1.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)100 a, i e =0a (--50)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)100 a, i c =0a (--)6 v turn-on time t on see specified test circuit. (70)40 ns storage time t stg see specified test circuit. (650)1000 ns fall time t f see specified test circuit. (60)80 ns package dimensions switching time test circuit unit : mm (typ) 7508-002 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 123 1 : base 2 : collector 3 : emitter sanyo : to-220ml --10 -- 9 -- 8 -- 6 -- 7 -- 4 -- 5 -- 2 -- 3 -- 1 0 --1.0 0 --2.0 --3.0 --4.0 --5.0 --0.5 --1.5 --2.5 --3.5 --4.5 10 9 8 6 7 4 5 2 3 1 0 1.0 0 2.0 3.0 4.0 5.0 0.5 1.5 2.5 3.5 4.5 i c -- v ce --10ma --20ma --30ma --40ma --50ma --60ma --70ma --80ma --100ma i b =0ma it04794 i c -- v ce i b =0ma 10ma 20ma 30ma 40ma it04795 2SA2099 2sc5888 --90ma from top 100ma 90ma 80ma 70ma 60ma 50ma collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a v r r b v cc =20v v be = --5v + + 50 input output r l 100 f470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =3a (for pnp, the polarity is reversed.)
2SA2099 / 2sc5888 no.7331-3/5 ta=75 c 25 c --25 c 1000 100 7 5 7 5 3 2 3 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 h fe -- i c 2SA2099 v ce = --2v it04800 i c -- v be 2sc5888 v ce =2v ta=75 c 25 c --25 c it04799 ta=75 c 25 c -- 2 5 c 2SA2099 v ce = --2v --12 --10 -- 8 -- 4 -- 2 -- 6 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 12 10 8 4 2 6 0 0 0.2 0.4 0.6 0.8 1.2 1.0 i c -- v be it04798 ta=75 c 25 c --25 c 1000 100 7 7 5 3 2 5 0.01 3 25 10 0.1 73 257 3 257 1.0 h fe -- i c 2sc5888 v ce =2v it04801 f t -- i c 100 10 2 7 3 2 5 3 --0.01 257 3257 3257 3 --0.1 --1.0 --10 it04802 2SA2099 v ce = --5v f t -- i c 3 100 10 2 7 3 2 5 5 0.01 257 3257 3257 3 0.1 1.0 10 it04803 2sc5888 v ce =5v base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a dc current gain, h fe collector current, i c -- a collector current, i c -- a dc current gain, h fe --5.0 --4.5 --4.0 --3.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 0 -- 2 0 --4 --6 --8 --10 -- 1 -- 3 -- 5 -- 7 -- 9 i c -- v ce --2ma --4ma --6ma --8ma --10ma --12ma --14ma --16ma --20ma i b =0 ma it04796 i c -- v ce i b =0 ma 2ma 4ma 6ma 8ma 10ma 12ma it04797 2SA2099 --18ma 2sc5888 from top 20ma 18ma 14ma 16ma 5.0 4.5 4.0 3.0 3.5 2.0 2.5 1.0 1.5 0.5 0 2 0 46810 13579 collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a
2SA2099 / 2sc5888 no.7331-4/5 --0.01 --0.1 2 3 57 2 3 57 2 3 57 --1.0 --10 3 2 --1000 7 5 3 2 7 5 3 2 --100 -- 1 0 v ce (sat) -- i c it04808 ta=75 c 25 c --25 c 2SA2099 i c / i b =50 v be (sat) -- i c 3 --1000 3 --0.01 --0.1 --1.0 --10 ta= --25 c 25 c 75 c 2 7 5 23 57 23 57 23 57 3 --1000 3 --0.01 --0.1 --1.0 --10 2 7 5 23 57 23 57 23 57 2SA2099 i c / i b =20 it04810 --1000 --100 2 3 5 7 2 3 5 7 7 -- 1 0 5 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c ta=75 c -- 2 5 c it04806 2SA2099 i c / i b =20 25 c 1000 100 2 3 5 7 2 3 5 7 5 7 10 3 0.01 0.1 23 57 23 57 23 57 1.0 10 v ce (sat) -- i c ta=75 c --25 c it04807 2sc5888 i c / i b =20 25 c 0.01 0.1 23 57 23 57 23 57 1.0 10 1000 100 7 5 3 2 7 5 3 2 10 v ce (sat) -- i c it04809 ta=75 c 25 c --25 c 2sc5888 i c / i b =50 v be (sat) -- i c ta= --25 c 25 c 75 c 2sc5888 i c / i b =20 it04811 collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a cob -- v cb 1000 7 5 3 2 7 5 3 2 10 100 -- 0 . 1 37 25 37 25 37 25 --1.0 --10 --100 it04804 2SA2099 f=1mhz cob -- v cb 1000 7 5 3 2 7 5 3 2 10 100 0.1 37 25 37 25 37 25 1.0 10 100 it04805 2sc5888 f=1mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf
2SA2099 / 2sc5888 no.7331-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2008. specifications and information herein are subject to change without notice. 0 30 20 25 15 10 5 20 060 40 80 100 140 120 160 p c -- tc it05373 case temperature, tc -- c collector dissipation, p c -- w it05371 a s o 2 3 5 7 2 3 5 7 2 3 2 3 5 7 1.0 10 0.1 0.01 23 57 0.1 1.0 23 57 10 23 57 1ms 100ms dc operation 100 s 50 s 500 s 10ms i cp =13a i c =10a 10 s tc=25 c single pulse (for pnp, minus sign is omitted.) 0 2.5 1.5 2.0 1.0 0.5 20 060 40 80 100 140 120 160 p c -- ta it05372 no heat sink collector dissipation, p c -- w ambient temperature, ta -- c collector-to-emitter voltage, v ce -- v collector current, i c -- a
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